We all know very well that the South Korean giant Samsung, who is preparing for the launch of its all-new flagship smartphone, of course, Galaxy S10, has recently announced its intention to buy the company responsible for the OPPO camera-lens and not only that even along with this the South Korean giant Samsung also announced the world’s fastest internal memory as well.
Samsung Launches World’s First 1TB UFS Memory For Smartphones
The South Korean giant Samsung, who is preparing for the launch of its all-new flagship smartphone, of course, Galaxy S10, has recently announced its intention to buy the company responsible for the OPPO camera-lens and not only that even along with this the South Korean giant Samsung also announced the world’s fastest internal memory as well.
Yes, the South Korean giant Samsung has announced its brand new 1TB eUFS 2.1 chip, which is the fastest internal memory in the world. As Samsung has itself confirmed that mass production of this memory chip has already begun for use in next-generation smartphones.
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The new chip comes four years after the South Korean giant Samsung brought a 128GB UFS chip and three years after a 256GB chip. With the new internal memory, users can enjoy a storage capacity comparable to a laptop without having to link their smartphones with additional memory cards, as they claim from the company itself.
The executive vice president of Sales and Marketing for Memory at Samsung Electronics, of course, Cheol Choi said that the 1TB eUFS is expected to “play a key role in delivering a more notebook-like user experience to the next generation of smartphones.” With the new memory chip, users can store 260 videos of 10 minutes in 4K UHD format.
The South Korean giant Samsung also confirmed that the 1TB eUFS has a reading speed of up to 1000 megabytes per second, which is 10 times faster than the speed of a typical microSD card, which means it could move 5GB of HD video in just five seconds. In addition, the speed of random writes is 500 times faster than a high-performance microSD card.
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Regarding the speed of writing, there is also a noticeable improvement, since the 1TB eUFS 2.1 reaches 260 MB/s. In addition, the speed of random reading has increased up to 38 percent with respect to the version of 512GB, reaching up to 58000 IOPS.
While now the company, of course, the South Korean giant Samsung plans to expand the production in the face of strong 1TB eUFS anticipated demand from mobile device manufacturers around the world, including rumors that the expected Galaxy S10 Plus could have this internal memory. So, what do you think about this? Simply share all your views and thoughts in the comment section below.
